LSF876C1 infrared emitting diode 2.electrical & optical characteristics (ta=25 ) symbol min typ max unit po 8.0 18.0 mw vf 1.5 1.8 v ir 10 a p 870 nm ? 45 nm 20 deg. features ?high-output powe r ?compact ? high reliability applications ?optical switches anode cathode ?optical sensors 1. absolute maximum ratings (ta=25 ) symbol unit if ma 27 ifp a vr v pd mw topr tstg tj tls *2:time 5 sec max,position:up to 3mm from the body 100 260 100 1 5 100 -20 to 80 -30 to 100 power output forward voltage i t e m ratings reverse current peak wavelength spectral line half width half intensity beam angle conditions if=50ma if=50ma forward current (dc) dimensions (unit:mm) vr=5v if=50ma if=50ma if=50ma i t e m forward current (pulse)*1 reverse voltage power dissipation operating temp. *1:tw=10us,t=10ms lead soldering temp.*2 storage temp. junction temp. thermal derating curve 0 20 40 60 80 -30 0 30 60 90 ambient temperature( ) forward current(ma) forward i-v characteristics 0 20 40 60 80 100 120 0123 forward voltage(v) forward current(ma) spectral output 0 20 40 60 80 100 120 770 870 970 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 50 100 150 200 250 0 25 50 75 100 125 forward current(ma) relative power output(%) optrans 11/6/2009 LSF876C1.xls to purchase this part contact marktech optoelectronics at 800.984.5337 optoelectronics www.marktechopto.com marktech
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